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Volumn , Issue , 2000, Pages 273-275
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An optimized integration scheme for 0.13 μm technology node dual-damascene Cu interconnect
a a a a a a b a |
Author keywords
[No Author keywords available]
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Indexed keywords
INTEGRATION;
DUAL DAMASCENE;
ELECTRICAL SIMULATION;
GLOBAL INTERCONNECTS;
INTEGRATION SCHEME;
NITRIDE LAYERS;
PROCESS WINDOW;
SACRIFICIAL LAYER;
TECHNOLOGY NODES;
INTEGRATED CIRCUIT INTERCONNECTS;
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EID: 84962896280
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IITC.2000.854346 Document Type: Conference Paper |
Times cited : (7)
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References (2)
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