The study of crystallization acceleration effect of the interface layer for phase-change optical disks

2002 International Symposium on Optical Memory and Optical Data Storage Topical Meeting, ISOM/ODS 2002 - Joint International Symposium on Optical Memory and Optical Data Storage 2002, Technical Digest

Volumn , Issue , 2002, Pages 90-92

  Wang, Wei Hsiang ^a   Chen, Joong Fa ^a   Lu, Tung Kuei ^a   Huang, Min Hui ^a   Chuang, Jei Ming ^a   Wang, Shyh Yeu ^a  

^a Ritek Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTALLIZATION KINETICS; CRYSTALLOGRAPHY; DATA COMMUNICATION SYSTEMS; DATA STORAGE EQUIPMENT; DATA TRANSFER; DATA TRANSFER RATES; DIGITAL STORAGE; INTERFACES (MATERIALS); NITRIDES; OPTICAL DISK STORAGE; SILICON CARBIDE; SILICON OXIDES; STORAGE (MATERIALS); VIDEODISKS; ZINC SULFIDE;

ACCELERATION EFFECTS; ALUMINUM NITRIDE (ALN); CRYSTALLIZATION RATES; DIELECTRIC LAYER; LAYER STRUCTURES; PHASE CHANGE OPTICAL DISKS; RECORDING MATERIALS; SILICON CARBIDES (SIC);

OPTICAL DATA STORAGE;

EID: 84962886216     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/OMODS.2002.1028577     Document Type: Conference Paper

References (1)

1. N.Yamada, M.Otoba, K, Kawahara, N. Miyagaiwa, H, Ohta, N. Akahira and T. Matsunege, "Phase Change Optical Disk Having a Nitride Interface Layer," Jpn. J. Appl. Phys. 37 Part 1(4B)(1998).