Investigation of InGaAs p-i-n photodiode for optical-microwave mixing process

12th International Conference on Microwaves and Radar, MIKON 1998

Volumn 1, Issue , 1998, Pages 171-175

  Piotrowski, J K ^a   Galwas, B A ^a   Malysev, S A ^b   Andrievski, V F ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ALLOYS; MICROWAVES; MIXING; PHOTODIODES; RADAR; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

DC CHARACTERISTICS; FREQUENCY DEPENDENCE; LOCAL OSCILLATOR POWER; OPTICAL MICROWAVES; OPTICAL POWER; OPTICAL-MICROWAVE MIXING; PIN PHOTODIODE; RESPONSIVITY;

MICROWAVE OSCILLATORS;

EID: 84962872019     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIKON.1998.737941     Document Type: Conference Paper

References (3)

1. Y-G. Wey et ai. , "1 IO-GHz GaInAs/InP Double Heterostructure p-i-n Photodetectors", IEEE Journal of Lightwave Technology, vol. 13, no. 7, July 1995, pp. 1490-1499.
2. T. E. Darcie, ,Subcarrier Multiplexing for Multiple-Access Lightwave Networks", IEEE Journal of Lightwave Technology, vol. 5, no. 8, Aug. 1987, pp. 1103-1 110.
3. T. Berceli et al. , ,Improved Optical-Microwave Mixing Process Utilizing High Speed Photodiodes", Proc. of the 26" EuMC, Prague, Sept. 1996, pp. 125-129.