Some reliability aspects of high temperature ICs

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 151-154

  Brusius, P ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; INTEGRATED CIRCUITS; TIMING CIRCUITS;

ELECTRICAL PERFORMANCE; HIGH TEMPERATURE; HIGH TEMPERATURE FAILURE; HIGH-TEMPERATURE ICS; PHYSICAL MECHANISM; WIRE BONDS;

FAILURE (MECHANICAL);

EID: 84962300602     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676778     Document Type: Conference Paper

References (6)

1. J. T. Benoit, R. R. Grzybowski, and D. B. Kerwin, "Evaluation of Aluminum Wire Bonds for High Temperature (200°C) Electronic Packaging", Transactions of Third International High Temperature Electronics Conference, vol. 1, pp III-17-23, 1996.
2. R. R. Gryzbowski, and D. B. Kerwin, "High Temperature Reliability of Ai/Au and Au/Au Wire Bonds", Transactions of the Second International High Temperature Electronics Conference, vol. 1, pp. VIII-9 to VIII-14, 1994.
3. W. Gerling, "Electrical and Physical Characterization of Gold-Ball Bonds on Aluminum Layers, " 34th Proc. IEEE Electronic Components Conference, p 13, May 1984.
4. Semiconductor Reliability News, DM Data Inc., vol. I, No. 6, September 1989, pp 9.
5. Semiconductor Reliability News, DM Data Inc., vol. 11, No. 12, December 1990, pp 4.
6. G. Goetz and G. Johnson, "Tungsten-Based Metalization for High Temperature Conductors and Contacts", Transactions of the Second International High Temperature Electronics Conference, vol. 1, pp IX-33 to 39, 1994.