Temperature-Dependent Photoluminescence of g-C3N4: Implication for Temperature Sensing

ACS Applied Materials and Interfaces

Volumn 8, Issue 3, 2016, Pages 2181-2186

  Das, Debanjan ^a   Shinde, S L ^a   Nanda, K K ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

activation energy; nitride; photoluminescence; quantum efficiency; sensing

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CARBON; CHEMICAL ACTIVATION; ENERGY EFFICIENCY; NITRIDES; PHOTOLUMINESCENCE; QUANTUM YIELD; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE SENSORS;

ABSOLUTE QUANTUM YIELDS; EXCITON-BINDING ENERGY; GRAPHITE-LIKE CARBON NITRIDES; SENSING; TEMPERATURE DEPENDENCIES; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TEMPERATURE SENSING;

QUANTUM EFFICIENCY;

EID: 84962293530     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b10770     Document Type: Article

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