Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures

Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components, WFOPC 2002

Volumn , Issue , 2002, Pages 148-152

  Leong, D ^a   Djie, H S ^a   Ang, L K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ARGON LASERS; PLASMA DIAGNOSTICS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

ARGON PLASMAS; BLUE SHIFT; INGAAS/INGAASP; LASER STRUCTURES; QUANTUM WELL INTERMIXING; RF-POWER; TAGUCHI'S METHODS;

REACTIVE ION ETCHING;

EID: 84961763301     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/FOPC.2002.1015818     Document Type: Conference Paper

References (4)

1. J. H. Marsh, "Quantum well intermixing", Semicon. Sci. Technol., 8, pp. 1136-1155, 1993.
2. B. S. Ooi, A.C. Bryce, and J.H. Marsh, "Integration process for photonic integrated circuits using plasma damage induced layer intermixing, "Electron. Lett., vol 31(6), pp. 449-451, 1995.
3. T.C.L. Wee, B.S. Ooi, T.K. Ong, Y.L. Lam, Y.C. Chan and G.I. Ng. "Novel Quantum Well Intermixing in InGaAs-InGaAsP Laser Structure using Argon Plasma Exposure", Lasers and Electro-Optics Europe, 2000.
4. M.A. Lieberman and A. J. Lichtenberg, "Principles of Plasma Discharges and Materials processing" (Wiley, NY 1994).