Dynamic behaviour of new IGBT and EMCON-diodes for low and high voltage applications

Proceedings of the Power Conversion Conference-Osaka 2002, PCC-Osaka 2002

Volumn 1, Issue , 2002, Pages 240-247

  Lorenz, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIODES;

DYNAMIC BEHAVIOURS; ELECTRICAL FIELD STRENGTH; HIGH VOLTAGE APPLICATIONS; HIGH VOLTAGE DEVICES; LOW-VOLTAGE DEVICES; SAFE OPERATION AREA; SWITCHING CHARACTERISTICS; TRANSISTOR CELLS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84961720238     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PCC.2002.998554     Document Type: Conference Paper

References (10)

1. T. Laska et all, "Ultrathin wafer Technology for a new 600V-NPT-IGBT", Proceedings of ISPSD 1997
2. T. Laska et all, "The Field Stop IGBT Concept with an Optimized Diode", Proceedings PCIM Nürnberg 2000
3. F. Auerbach et all, "6.5kV IGBT-Modules", Proceedings IPEC - Tokyo 2000
4. L. Lorenz et all, "Thin-wafer technology - the key process for the future", Journal Power Electronics Europe, Issue 1/2000
5. L. Lorenz et all, "Future Driving Forces in Power Electronics", Journal Power Electronics Europe, Issue 2/2000
6. L. Lorenz et all, "CoolMOS - a new milestone on high voltage Power MOSFET", Proceedings ISPSD 1999
7. A. Porst, F. Auerbach, H. Brunner, G. Deboy and F. Hille, "Improvement of the diode characteristics using emitter-controlled principles (EMCON-Diode)", Proceedings ISPSD 1997, pp. 213-216
8. L. Lorenz, A. Mauder, T. Laska, "The new IGBT generation a great improvement potential for motor drive systems", Proceedings IEEE IAS 2000
9. L. Lorenz, A. Mauder, T. Laska, "The Field Stop IGBT concept and EMCON High Efficiency
10. L. Lorenz, A. Mauder, J. Bauer, "Rated Overload of IGBTs for low voltage and high voltage devices", IAS/IEEE 2001