Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

Nature Communications

Volumn 7, Issue , 2015, Pages

  Perello, David J ^a   Chae, Sang Hoon ^a   Song, Seunghyun ^a   Lee, Young Hee ^a  

^a NONE

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ERRATUM; ERROR;

EID: 84961304499     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms10428     Document Type: Erratum

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