Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment

Applied Surface Science

Volumn 367, Issue , 2016, Pages 52-58

  Kennedy, J ^a,b   Murmu, P P ^a   Leveneur, J ^a   Markwitz, A ^a,b   Futter, J ^a  

^a GNS SCIENCE   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

Author keywords

Electrical resistivity; Ion beam analysis; Ion beam sputtering; Transmission; X ray diffraction; Zinc oxide

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; II-VI SEMICONDUCTORS; ION BEAMS; IONS; LIGHT TRANSMISSION; OXIDE FILMS; OXYGEN VACANCIES; SPUTTERING; THIN FILMS; TRANSMISSIONS; X RAY DIFFRACTION; ZINC OXIDE;

ELASTIC RECOIL DETECTION ANALYSIS; ELECTRICAL CONDUCTIVITY; HYDROGEN INTERSTITIALS; ION BEAM ANALYSIS; ION-BEAM SPUTTERING; OXYGEN-VACANCY COMPLEXES; PREFERRED ORIENTATIONS; ZINC OXIDE THIN FILMS;

OPTICAL FILMS;

EID: 84960193125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.01.160     Document Type: Article

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