Biexciton Formation in Bilayer Tungsten Disulfide

ACS Nano

Volumn 10, Issue 2, 2016, Pages 2176-2183

  He, Zhengyu ^a   Xu, Wenshuo ^a   Zhou, Yingqiu ^a   Wang, Xiaochen ^a   Sheng, Yuewen ^a   Rong, Youmin ^a   Guo, Shaoqiang ^b   Zhang, Junying ^b   Smith, Jason M ^a   Warner, Jamie H ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b BEIHANG UNIVERSITY   (China)

Author keywords

biexciton; photoluminescence; transition metal dichalcogenide; tungsten disulfide

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; BINS; CHEMICAL VAPOR DEPOSITION; DENSITY FUNCTIONAL THEORY; DISSOCIATION; ENERGY GAP; EXCITONS; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSITION METALS; TUNGSTEN;

BIEXCITON BINDING ENERGY; BIEXCITONS; DIRECT BAND GAP SEMICONDUCTORS; INCREASED TEMPERATURE; PHOTONIC APPLICATION; THERMAL DISSOCIATION; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISULFIDE;

TENSILE STRAIN;

EID: 84960192327     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b06678     Document Type: Article

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