Wafer-scale, conformal and direct growth of MoS 2 thin films by atomic layer deposition

Applied Surface Science

Volumn 365, Issue , 2016, Pages 160-165

  Jang, Yujin ^a,b   Yeo, Seungmin ^c   Lee, Han Bo Ram ^d   Kim, Hyungjun ^c   Kim, Soo Hyun ^a  

^a Yeungnam University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c Yonsei University   (South Korea)

^d SolarLight Ltd   (South Korea)

Author keywords

Atomic layer deposition; H 2 S plasma; Mo(CO) 6; MoS 2; Step coverage

Indexed keywords

ATOMS; CHEMICAL BONDS; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOCRYSTALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SINGLE CRYSTALS; SULFUR COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION TEMPERATURES; MOLYBDENUM DISULFIDE; MOLYBDENUM HEXACARBONYL; MOS2; NANOCRYSTALLINE MICROSTRUCTURES; RUTHERFORD BACKSCATTERING SPECTROMETRY; STEP COVERAGE; UNIFORM DEPOSITION;

ATOMIC LAYER DEPOSITION;

EID: 84959547609     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.01.038     Document Type: Article

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