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Volumn 6, Issue , 2016, Pages

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATION; BILAYER MEMBRANE; HEIGHT; INJECTION; THEORETICAL MODEL;

EID: 84959299449     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep21786     Document Type: Article
Times cited : (272)

References (66)
  • 1
    • 84903281184 scopus 로고    scopus 로고
    • The valley Hall effect in MoS2 transistors
    • K. F. Mak, K. L. McGill, J. Park & P. L. McEuen. The valley Hall effect in MoS2 transistors. Science 344, 1489-1492 (2014).
    • (2014) Science , vol.344 , pp. 1489-1492
    • Mak, K.F.1    McGill, K.L.2    Park, J.3    McEuen, P.L.4
  • 2
    • 84900314804 scopus 로고    scopus 로고
    • Edge nonlinear optics on a MoS2 atomic monolayer
    • X. Yin et al. Edge nonlinear optics on a MoS2 atomic monolayer. Science 344, 488-490 (2014).
    • (2014) Science , vol.344 , pp. 488-490
    • Yin, X.1
  • 3
    • 84959265172 scopus 로고    scopus 로고
    • Using the valleys in monolayer MoS2
    • J. Stajic. Using the valleys in monolayer MoS2. Science 344, 1476-1478 (2014).
    • (2014) Science , vol.344 , pp. 1476-1478
    • Stajic, J.1
  • 4
    • 84926231397 scopus 로고    scopus 로고
    • Atomically thin p-n junctions with van der Waals heterointerfaces
    • C.-H. Lee et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nature Nanotech. 150, 676-681 (2014).
    • (2014) Nature Nanotech , vol.150 , pp. 676-681
    • Lee, C.-H.1
  • 5
    • 84874655220 scopus 로고    scopus 로고
    • Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
    • S. Wu et al. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2. Nature Phys. 9, 149-153 (2013).
    • (2013) Nature Phys , vol.9 , pp. 149-153
    • Wu, S.1
  • 6
    • 77957204738 scopus 로고    scopus 로고
    • Atomically thin MoS2: A new direct-gap semiconductor
    • K. F. Mak, C. Lee, J. Hone, J. Shan & T. F. Heinz. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
    • (2011) Phys. Rev. Lett , vol.105 , pp. 136805
    • Mak, K.F.1    Lee, C.2    Hone, J.3    Shan, J.4    Heinz, T.F.5
  • 7
    • 84884215670 scopus 로고    scopus 로고
    • Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2
    • B. W. H. Baugher, H. O. H. Churchill, Y. Yang & P. Jarillo-Herrero. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett. 13, 4212-4216 (2013).
    • (2013) Nano Lett , vol.13 , pp. 4212-4216
    • Baugher, B.W.H.1    Churchill, H.O.H.2    Yang, Y.3    Jarillo-Herrero, P.4
  • 9
    • 84899415979 scopus 로고    scopus 로고
    • MoS2 field-effect transistor for next-generation label-free biosensors
    • D. Sarkar et al. MoS2 field-effect transistor for next-generation label-free biosensors. ACS Nano 8, 3992-4003 (2014).
    • (2014) ACS Nano , vol.8 , pp. 3992-4003
    • Sarkar, D.1
  • 10
    • 84555223620 scopus 로고    scopus 로고
    • Integrated circuits and logic operations based on single-layer MoS2
    • B. Radisavljevic, M. B. Whitwick & A. Kis. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934-9938 (2011).
    • (2011) ACS Nano , vol.5 , pp. 9934-9938
    • Radisavljevic, B.1    Whitwick, M.B.2    Kis, A.3
  • 11
    • 84866027034 scopus 로고    scopus 로고
    • Integrated circuits based on bilayer MoS2 transistors
    • H. Wang et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674-4680 (2012).
    • (2012) Nano Lett , vol.12 , pp. 4674-4680
    • Wang, H.1
  • 12
    • 84873695431 scopus 로고    scopus 로고
    • Chemical vapor sensing with monolayer MoS2
    • F. K. Perkins et al. Chemical vapor sensing with monolayer MoS2. Nano Lett. 13, 668-673 (2013).
    • (2013) Nano Lett , vol.13 , pp. 668-673
    • Perkins, F.K.1
  • 13
    • 84876063289 scopus 로고    scopus 로고
    • Electroluminescence in single layer MoS2
    • R. S. Sundaram et al. Electroluminescence in single layer MoS2. Nano Lett. 13, 1416-1421 (2013).
    • (2013) Nano Lett , vol.13 , pp. 1416-1421
    • Sundaram, R.S.1
  • 14
    • 84856170872 scopus 로고    scopus 로고
    • Single-layer MoS2 phototransistors
    • Z. Yin et al. Single-layer MoS2 phototransistors. ACS Nano 6, 74-80 (2012).
    • (2012) ACS Nano , vol.6 , pp. 74-80
    • Yin, Z.1
  • 16
    • 84883740963 scopus 로고    scopus 로고
    • Zeeman-Type spin splitting controlled by an electric field
    • H. Yuan et al. Zeeman-Type spin splitting controlled by an electric field. Nature Phys. 9, 563-569 (2013).
    • (2013) Nature Phys , vol.9 , pp. 563-569
    • Yuan, H.1
  • 17
    • 84864881664 scopus 로고    scopus 로고
    • Valley polarization in MoS2 monolayers by optical pumping
    • H. Zeng, J. Dai, W. Yao, D. Xiao & X. Cui. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490-493 (2012).
    • (2012) Nature Nanotech , vol.7 , pp. 490-493
    • Zeng, H.1    Dai, J.2    Yao, W.3    Xiao, D.4    Cui, X.5
  • 18
    • 84864874878 scopus 로고    scopus 로고
    • Control of valley polarization in monolayer MoS2 by optical helicity
    • K. F. Mak, K. He, J. Shan & T. F. Heinz. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494-498 (2012).
    • (2012) Nature Nanotech , vol.7 , pp. 494-498
    • Mak, K.F.1    He, K.2    Shan, J.3    Heinz, T.F.4
  • 19
    • 84930476811 scopus 로고    scopus 로고
    • Multi-Terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
    • X. Cui et al. Multi-Terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nature Nanotech. 10, 534-520 (2015).
    • (2015) Nature Nanotech , vol.10 , pp. 534-520
    • Cui, X.1
  • 20
    • 77951069162 scopus 로고    scopus 로고
    • Emerging photoluminescence in monolayer MoS2
    • A. Splendiani et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
    • (2011) Nano Lett , vol.10 , pp. 1271-1275
    • Splendiani, A.1
  • 21
    • 84872115141 scopus 로고    scopus 로고
    • High performance multilayer MoS2 transistors with scandium contacts
    • S. Das, H.-Y. Chen, A. V. Penumatcha & J. Appenzeller. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100-105 (2013).
    • (2013) Nano Lett , vol.13 , pp. 100-105
    • Das, S.1    Chen, H.-Y.2    Penumatcha, A.V.3    Appenzeller, J.4
  • 22
    • 84859795935 scopus 로고    scopus 로고
    • Designing electrical contacts to MoS2 monolayers: A computational study
    • I. Popov, G. Seifert & D. Tomanek. Designing electrical contacts to MoS2 monolayers: A computational study. Phys. Rev. Lett. 108, 156802 (2012).
    • (2012) Phys. Rev. Lett , vol.108 , pp. 156802
    • Popov, I.1    Seifert, G.2    Tomanek, D.3
  • 23
    • 84905737252 scopus 로고    scopus 로고
    • Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors
    • J. Kang, W. Liu, D. Sarkar, D. Jena & K. Banerjee. Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys. Rev. X 4, 031005 (2014).
    • (2014) Phys. Rev , vol.10 , Issue.4 , pp. 031005
    • Kang, J.1    Liu, W.2    Sarkar, D.3    Jena, D.4    Banerjee, K.5
  • 24
    • 84877961084 scopus 로고    scopus 로고
    • Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
    • M. Amani et al. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Appl. Phys. Lett. 102, 193107 (2013).
    • (2013) Appl. Phys. Lett , vol.102 , pp. 193107
    • Amani, M.1
  • 25
    • 84903449930 scopus 로고    scopus 로고
    • High-performance few-layer-mos2 field-effect-Transistor with record low contact-resistance
    • W. Liu et al. High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance. IEEE International Electron Devices Meeting 499-502 (2013).
    • (2013) IEEE International Electron Devices Meeting , pp. 499-502
    • Liu, W.1
  • 26
    • 84859524063 scopus 로고    scopus 로고
    • Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
    • H. Qiu et al. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 100, 123104 (2012).
    • (2012) Appl. Phys. Lett , vol.100 , pp. 123104
    • Qiu, H.1
  • 27
    • 84873628466 scopus 로고    scopus 로고
    • Tuning the electronic and chemical properties of monolayer MoS2 adsorbed on transition metal substrates
    • W. Chen, E. J. G. Santos, W. Zhu, E. Kaxiras & Z. Zhang. Tuning the electronic and chemical properties of monolayer MoS2 adsorbed on transition metal substrates. Nano Lett. 13, 509-514 (2013).
    • (2013) Nano Lett , vol.13 , pp. 509-514
    • Chen, W.1    Santos, E.J.G.2    Zhu, W.3    Kaxiras, E.4    Zhang, Z.5
  • 28
    • 84897999656 scopus 로고    scopus 로고
    • The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces
    • C. Gong, L. Colombo, R. M. Wallace & K. Cho. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. Nano Lett. 14, 1714-1720 (2014).
    • (2014) Nano Lett , vol.14 , pp. 1714-1720
    • Gong, C.1    Colombo, L.2    Wallace, R.M.3    Cho, K.4
  • 29
    • 84859758900 scopus 로고    scopus 로고
    • Electronic band structures of molybdenum and tungsten dichalcogenides by the GW approach
    • H. Jiang. Electronic band structures of molybdenum and tungsten dichalcogenides by the GW approach. J. Phys. Chem. C 116, 7664-7671 (2012).
    • (2012) J. Phys. Chem C , vol.116 , pp. 7664-7671
    • Jiang, H.1
  • 30
    • 80052552663 scopus 로고    scopus 로고
    • First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes
    • M. C. Toroker et al. First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes. Phys. Chem. Chem. Phys. 13, 16644 (2011).
    • (2011) Phys. Chem. Chem. Phys , vol.13 , pp. 16644
    • Toroker, M.C.1
  • 31
    • 33645507578 scopus 로고    scopus 로고
    • Excitons in boron nitride nanotubes: Dimensionality effects
    • L. Wirtz, A. Marini & A. Rubio. Excitons in boron nitride nanotubes: dimensionality effects. Phys. Rev. Lett. 96, 126104 (2006).
    • (2006) Phys. Rev. Lett , vol.96 , pp. 126104
    • Wirtz, L.1    Marini, A.2    Rubio, A.3
  • 32
    • 33645505331 scopus 로고    scopus 로고
    • Excitons and many-electron effects in the optical response of single-walled boron nitride nanotubes
    • C.-H. Park, C. D. Spataru & S. G. Louie. Excitons and many-electron effects in the optical response of single-walled boron nitride nanotubes. Phys. Rev. Lett. 96, 126105 (2006).
    • (2006) Phys. Rev. Lett , vol.96 , pp. 126105
    • Park, C.-H.1    Spataru, C.D.2    Louie, S.G.3
  • 33
  • 34
    • 70350521607 scopus 로고    scopus 로고
    • Excitonic effects on the optical response of graphene and bilayer graphene
    • L. Yang, J. Deslippe, C.-H. Park, M. L. Cohen & S. G. Louie. Excitonic effects on the optical response of graphene and bilayer graphene. Phys. Rev. Lett. 103, 186802 (2009).
    • (2009) Phys. Rev. Lett , vol.103 , pp. 186802
    • Yang, L.1    Deslippe, J.2    Park, C.-H.3    Cohen, M.L.4    Louie, S.G.5
  • 35
    • 84881569333 scopus 로고    scopus 로고
    • Enhanced many-body effects in one-dimensional linear atomic chains
    • R. Fei et al. Enhanced many-body effects in one-dimensional linear atomic chains. Phys. Status Solidi B 8, 1636-1643 (2013).
    • (2013) Phys. Status Solidi B , vol.8 , pp. 1636-1643
    • Fei, R.1
  • 36
    • 84888107960 scopus 로고    scopus 로고
    • Optical spectrum of MoS2: Many-body effects and diversity of exciton states
    • D. Y. Qiu, F. H. da Jornada & S. G. Louie. Optical spectrum of MoS2: many-body effects and diversity of exciton states. Phys. Rev. Lett. 111, 216805 (2013).
    • (2013) Phys. Rev. Lett , vol.111 , pp. 216805
    • Qiu, D.Y.1    Da Jornada, F.H.2    Louie, S.G.3
  • 37
    • 84897633677 scopus 로고    scopus 로고
    • Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2
    • J. He, K. Hummer & C. Franchini. Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. Phys. Rev. B 89, 075409 (2014).
    • (2014) Phys. Rev. B , vol.89 , pp. 075409
    • He, J.1    Hummer, K.2    Franchini, C.3
  • 38
    • 84870838654 scopus 로고    scopus 로고
    • Tunable and sizable band gap in silicene by surface adsorption
    • R. Quhe et al. Tunable and sizable band gap in silicene by surface adsorption. Sci. Rep, doi: 10.1038/srep00853, 2, 853 (2012).
    • (2012) Sci. Rep , vol.2 , pp. 853
    • Quhe, R.1
  • 39
    • 84896779852 scopus 로고    scopus 로고
    • High-performance MoS2 transistors with low-resistance molybdenum contacts
    • J. Kang, W. Liu & K. Banerjee. High-performance MoS2 transistors with low-resistance molybdenum contacts. Appl. Phys. Lett. 104, 093106 (2014).
    • (2014) Appl. Phys. Lett , vol.104 , pp. 093106
    • Kang, J.1    Liu, W.2    Banerjee, K.3
  • 40
    • 84883121753 scopus 로고    scopus 로고
    • Calculated optical properties of 2H-MoS2 intercalated with lithium
    • A. H. Reshak & S. Auluck. Calculated optical properties of 2H-MoS2 intercalated with lithium. Phys. Rev. B 68, 125101 (2003).
    • (2003) Phys. Rev. B , vol.68 , pp. 125101
    • Reshak, A.H.1    Auluck, S.2
  • 41
    • 0030190741 scopus 로고    scopus 로고
    • Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
    • G. Kresse & J. Furthmuller. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996).
    • (1996) Comput. Mater. Sci , vol.6 , pp. 15-50
    • Kresse, G.1    Furthmuller, J.2
  • 42
    • 0011236321 scopus 로고    scopus 로고
    • From ultrasoft pseudopotentials to the projector augmented-wave method
    • G. Kresse & D. Joubert. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758-1775 (1999).
    • (1999) Phys. Rev. B , vol.59 , pp. 1758-1775
    • Kresse, G.1    Joubert, D.2
  • 43
    • 33645898818 scopus 로고
    • Accurate and simple analytic representation of the electron-gas correlation energy
    • J. P. Perdew & Y. Wang. Accurate and simple analytic representation of the electron-gas correlation energy. Phys. Rev. B 45, 13244-13249 (1992).
    • (1992) Phys. Rev. B , vol.45 , pp. 13244-13249
    • Perdew, J.P.1    Wang, Y.2
  • 44
    • 34547736601 scopus 로고    scopus 로고
    • Semiempirical van der Waals correction to the density functional description of solids and molecular structures
    • F. Ortmann, F. Bechstedt & W. G. Schmidt. Semiempirical van der Waals correction to the density functional description of solids and molecular structures. Phys. Rev. B 73, 205101 (2006).
    • (2006) Phys. Rev. B , vol.73 , pp. 205101
    • Ortmann, F.1    Bechstedt, F.2    Schmidt, W.G.3
  • 45
    • 1842816907 scopus 로고
    • Special points for Brillouin-zone integrations
    • H. J. Monkhorst & J. Pack. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188-5192 (1976).
    • (1976) Phys. Rev. B , vol.13 , pp. 5188-5192
    • Monkhorst, H.J.1    Pack, J.2
  • 46
    • 84881502029 scopus 로고    scopus 로고
    • Work function modulation of bilayer MoS2 nanoflake by backgate electric field effect
    • Y. Li, C.-Y. Xu, B.-Y. Zhang & L. Zhen. Work function modulation of bilayer MoS2 nanoflake by backgate electric field effect. Appl. Phys. Lett. 103, 033122 (2013).
    • (2013) Appl. Phys. Lett , vol.103 , pp. 033122
    • Li, Y.1    Xu, C.-Y.2    Zhang, B.-Y.3    Zhen, L.4
  • 47
    • 84866429144 scopus 로고    scopus 로고
    • Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
    • A. Ramasubramaniam. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides. Phys. Rev. B 86, 115409 (2012).
    • (2012) Phys. Rev. B , vol.86 , pp. 115409
    • Ramasubramaniam, A.1
  • 48
    • 84861643796 scopus 로고    scopus 로고
    • Lambrecht. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
    • T. Cheiwchanchamnangij & Walter R. L. Lambrecht. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2. Phys. Rev. B 85, 205302 (2012).
    • (2012) Phys. Rev. B , vol.85 , pp. 205302
    • Cheiwchanchamnangij, T.1    Walter, R.L.2
  • 49
    • 0037092743 scopus 로고    scopus 로고
    • Determination of effective permittivity and permeability of metamaterials from reflection and transmission coefficients
    • D. R. Smith, S. Schultz, P. Markoš & C. M. Soukoulis. Determination of effective permittivity and permeability of metamaterials from reflection and transmission coefficients. Phys. Rev. B 65, 195104 (2002).
    • (2002) Phys. Rev. B , vol.65 , pp. 195104
    • Smith, D.R.1    Schultz, S.2    Markoš, P.3    Soukoulis, C.M.4
  • 50
    • 0037171091 scopus 로고    scopus 로고
    • The SIESTA method for ab initio order-N materials simulation
    • J. M. Soler et al. The SIESTA method for ab initio order-N materials simulation. J. Phys. Condense. Mat. 14, 2745 (2002).
    • (2002) J. Phys. Condense. Mat , vol.14 , pp. 2745
    • Soler, J.M.1
  • 51
    • 67649414628 scopus 로고    scopus 로고
    • First-principles study of the interaction and charge transfer between graphene and metals
    • P. A. Khomyakov et al. First-principles study of the interaction and charge transfer between graphene and metals. Phys. Rev. B 79, 195425 (2009).
    • (2009) Phys. Rev. B , vol.79 , pp. 195425
    • Khomyakov, P.A.1
  • 52
    • 79954993398 scopus 로고    scopus 로고
    • First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M= Mo, Nb, W, Ta; X= S, Se, Te) monolayers
    • Y. Ding et al. First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M= Mo, Nb, W, Ta; X= S, Se, Te) monolayers. Physica B 406, 2254-2260 (2011).
    • (2011) Physica B , vol.406 , pp. 2254-2260
    • Ding, Y.1
  • 53
    • 0033092772 scopus 로고    scopus 로고
    • Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
    • R. Schlaf, O. Lang, C. Pettenkofer & W. Jaegermann. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule. J. Appl. Phys. 85, 2732-2753 (1999).
    • (1999) J. Appl. Phys , vol.85 , pp. 2732-2753
    • Schlaf, R.1    Lang, O.2    Pettenkofer, C.3    Jaegermann, W.4
  • 54
    • 84882421983 scopus 로고    scopus 로고
    • Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides
    • Y. Liang, S. Huang, R. Soklaski & L. Yang. Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides. Appl. Phys. Lett. 103, 042106 (2013).
    • (2013) Appl. Phys. Lett , vol.103 , pp. 042106
    • Liang, Y.1    Huang, S.2    Soklaski, R.3    Yang, L.4
  • 55
    • 33751318708 scopus 로고    scopus 로고
    • Renormalization of molecular electronic levels at metal-molecule interfaces
    • J. B. Neaton, M. S. Hybertsen & S. G. Louie. Renormalization of molecular electronic levels at metal-molecule interfaces. Phys. Rev. Lett. 97, 216405 (2006).
    • (2006) Phys. Rev. Lett , vol.97 , pp. 216405
    • Neaton, J.B.1    Hybertsen, M.S.2    Louie, S.G.3
  • 56
    • 84877256117 scopus 로고    scopus 로고
    • Degenerate n-doping of few-layer transition metal dichalcogenides by potassium
    • H. Fang et al. Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. Nano Lett. 13, 1991-1995 (2013).
    • (2013) Nano Lett , vol.13 , pp. 1991-1995
    • Fang, H.1
  • 57
    • 84907876410 scopus 로고    scopus 로고
    • Tunable transport gap in phosphorene
    • S. Das et al. Tunable transport gap in phosphorene. Nano Lett. 14, 5733-5739 (2014).
    • (2014) Nano Lett , vol.14 , pp. 5733-5739
    • Das, S.1
  • 58
    • 84903727079 scopus 로고    scopus 로고
    • Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
    • V. Tran, R. Soklaski, Y. Liang & L. Yang. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89, 235319 (2014).
    • (2014) Phys. Rev. B , vol.89 , pp. 235319
    • Tran, V.1    Soklaski, R.2    Liang, Y.3    Yang, L.4
  • 59
    • 84904616293 scopus 로고    scopus 로고
    • High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
    • J. Qiao, X. Kong, Z. X. Hu, F. Yang & W. Ji. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014).
    • (2014) Nat. Commun , vol.5 , pp. 4475
    • Qiao, J.1    Kong, X.2    Hu, Z.X.3    Yang, F.4    Ji., W.5
  • 60
    • 84900441707 scopus 로고    scopus 로고
    • Electrically switchable chiral light-emitting transistor
    • Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye & Y. Iwasa. Electrically switchable chiral light-emitting transistor. Science 344, 725-728 (2014).
    • (2014) Science , vol.344 , pp. 725-728
    • Zhang, Y.J.1    Oka, T.2    Suzuki, R.3    Ye, J.T.4    Iwasa, Y.5
  • 62
    • 84952333530 scopus 로고    scopus 로고
    • Does p-Type ohmic contact exist in WSe2-metal interfaces?
    • Y. Wang et al. Does p-Type ohmic contact exist in WSe2-metal interfaces? Nanoscale 8, 1179-1191 (2016).
    • (2016) Nanoscale , vol.8 , pp. 1179-1191
    • Wang, Y.1
  • 63
    • 84907157757 scopus 로고    scopus 로고
    • Schottky barrier heights for Au and Pd contacts to MoS2
    • N. Kaushik et al. Schottky barrier heights for Au and Pd contacts to MoS2. Appl. Phys. Lett. 105, 113505 (2014).
    • (2014) Appl. Phys. Lett , vol.105 , pp. 113505
    • Kaushik, N.1
  • 64
    • 84894637213 scopus 로고    scopus 로고
    • Toward low-power electronics: Tunneling phenomena in transition metal dichalcogenides
    • S. Das, A. Prakash, R. Salazar & J. Appenzeller. Toward low-power electronics: Tunneling phenomena in transition metal dichalcogenides. ACS Nano 8, 1681-1689 (2014).
    • (2014) ACS Nano , vol.8 , pp. 1681-1689
    • Das, S.1    Prakash, A.2    Salazar, R.3    Appenzeller, J.4
  • 65
    • 84948696535 scopus 로고    scopus 로고
    • Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
    • M. Fontana et al. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. Sci. Rep, doi: 10.1038/srep01634, 3, 1634 (2013).
    • (2013) Sci. Rep , vol.3 , pp. 1634
    • Fontana, M.1
  • 66
    • 84930482259 scopus 로고    scopus 로고
    • Highly anisotropic and robust excitons in monolayer black phosphorus
    • X. Wang et al. Highly anisotropic and robust excitons in monolayer black phosphorus. Nature Nanotech. 10, 517-521 (2015).
    • (2015) Nature Nanotech , vol.10 , pp. 517-521
    • Wang, X.1


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