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Volumn 1145, Issue , 1989, Pages 553-555

High resolution ftir study of lvms due to c in gaas: Measurement of internal strains and structure of the c(1) lines

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EID: 84958517826     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.969598     Document Type: Conference Paper
Times cited : (2)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.