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Volumn 1145, Issue , 1989, Pages 553-555
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High resolution ftir study of lvms due to c in gaas: Measurement of internal strains and structure of the c(1) lines
a a b c |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 84958517826
PISSN: 0277786X
EISSN: 1996756X
Source Type: Conference Proceeding
DOI: 10.1117/12.969598 Document Type: Conference Paper |
Times cited : (2)
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References (10)
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