A large and ultra fast nonlinear response of GaAs thin films due to nano-scale spatial structure of the internal field

Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Volumn , Issue , 2001, Pages 270-

  Ishihara, H ^a   Cho, K ^a   Akiyama, K ^b   Tomita, N ^b   Nomura, Yoshinori ^b   Isu, Toshiro ^b  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; FOUR WAVE MIXING; GALLIUM ARSENIDE; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; THIN FILMS;

DEGENERATE FOUR-WAVE MIXING; GAAS THIN FILMS; NON-LINEAR RESPONSE; RESONANT ENHANCEMENTS; RESONANT EXCITATION; SPATIAL PATTERNS; SPATIAL STRUCTURE; TIME RESOLVED MEASUREMENT;

NANOTECHNOLOGY;

EID: 84958239864     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/QELS.2001.962234     Document Type: Conference Paper

References (0)