Out-of-plane strain effect on silicon-based flexible FinFETs

Device Research Conference - Conference Digest, DRC

Volumn 2015-August, Issue , 2015, Pages 95-96

  Ghoneim, Mohamed T ^a   Alfaraj, Nasir ^a   Torres Sevilla, Galo A ^a   Fahad, Hossain M ^a   Hussain, Muhammad M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Artificial intelligence; Logic gates; Stress; Surface treatment

Indexed keywords

ARTIFICIAL INTELLIGENCE; DIELECTRIC MATERIALS; GATE DIELECTRICS; INTEGRATED CIRCUITS; LOGIC GATES; RECONFIGURABLE HARDWARE; SILICATES; STRESSES; SURFACE TREATMENT;

CHANNEL LENGTH; HAFNIUM SILICATES; INDUCED STRAIN; INORGANIC SOLIDS; OUT-OF PLANE; OUT-OF-PLANE STRESS; SILICON-BASED; ULTRA-THIN;

STRAIN;

EID: 84957614298     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2015.7175572     Document Type: Conference Paper

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7. IEEE TR (2014)