Understanding focus effects in submicron optical lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 922, Issue , 1988, Pages 135-148

  Mack, Chris A ^a  

^a NATIONAL SECURITY AGENCY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84957514431     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.968408     Document Type: Conference Paper

References (7)

1. C. A. Mack, "Photoresist Process Optimization,” KTI Microelectronics Seminar Interface '87 (1987).
2. R. Hershel and C. A. Mack, "Lumped Parameter Model for Optical Lithography,” Chapter 2, Lithography for VLSI. VLSI Electronics - Microstructure Science. R. K. Watts and N. G. Einspruch, eds., Academic Press (New York:1987)pp. 19-55.
3. C. A. Mack, "PROLITH: A Comprehensive Optical Lithography Model,” Optical Microlith. IV, Proc., SPIE Vol. 538 (1985) pp. 207-220.
4. C. A. Mack, "Advanced Topics in Lithography Modeling,” Adv. Resist Tech. Ill, Proc., SPIE Vol. 631 (1986) pp. 276-285.
5. H. J. Levinson and W. H. Arnold, "Focus: The Critical Parameter for Submicron Lithography,” Jour. Vac. Sci. Tech., Vol. B5, No. 1 (Jan/Feb 1987) pp. 293-298.
6. W. H. Arnold and H. J. Levinson, "Focus: The Critical Parameter for Submicron Optical Lithography: Part 2,” Optical Microlith. VI, Proc., SPIE Vol. 772 (1987) pp. 21-34.
7. M. Yeung, "Modeling Aerial Images in Two and Three Dimensions,” Kodak Microelectronics Seminar Interface '85 (1985) pp. 115-126.