Building graphene p-n junctions for next-generation photodetection

Nano Today

Volumn 10, Issue 6, 2015, Pages 701-716

  Lin, Li ^a   Liao, Lei ^a   Yin, Jianbo ^a   Peng, Hailin ^a   Liu, Zhongfan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Fabrication; Graphene p n junction; Photodetection; Sensitivity enhancement

Indexed keywords

ELECTRONIC PROPERTIES; FABRICATION; HETEROJUNCTIONS; PHOTODETECTORS; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTOR JUNCTIONS;

ELECTRONIC PLATFORMS; GRAPHENE P-N JUNCTIONS; OPTICAL AND ELECTRONIC PROPERTIES; PHOTO DETECTION; PHOTONIC STRUCTURE; SCALABLE PRODUCTION; SENSITIVITY ENHANCEMENTS; SILICON BASED PHOTONICS;

GRAPHENE;

GRAPHENE; METAL; NANOMATERIAL; SILICON;

ELECTRON; PHOTON; PHOTOTRANSDUCTION; REVIEW; SEMICONDUCTOR; SURFACE CHARGE; VAPOR;

EID: 84957434887     PISSN: 17480132     EISSN: 1878044X     Source Type: Journal    
DOI: 10.1016/j.nantod.2015.11.006     Document Type: Review

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