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Volumn 11, Issue 4, 1993, Pages 1283-1288
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Etching Rate Characterization of SiO2 and Si using Ion Energy Flux and Atomic Fluorine Density in a CF4/O2/Ar Electron Cyclotron Resonance Plasma
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 84957228602
PISSN: 07342101
EISSN: 15208559
Source Type: Journal
DOI: 10.1116/1.578540 Document Type: Conference Paper |
Times cited : (81)
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References (31)
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