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Volumn 11, Issue 4, 1993, Pages 1283-1288

Etching Rate Characterization of SiO2 and Si using Ion Energy Flux and Atomic Fluorine Density in a CF4/O2/Ar Electron Cyclotron Resonance Plasma

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84957228602     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.578540     Document Type: Conference Paper
Times cited : (81)

References (31)
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    • 0001401375 scopus 로고
    • edited by O. Auciello and D. L. Flamm, Academic, San Diego
    • N. Hershkowitz, in Plasma Diagnostics, edited by O. Auciello and D. L. Flamm (Academic, San Diego, 1989), Vol. 1, p. 113.
    • (1989) Plasma Diagnostics , vol.1 , pp. 113
    • Hershkowitz, N.1
  • 17
    • 0003072237 scopus 로고
    • edited by R. H. Huddlestone and S. L. Leonard, Academic, New York
    • F. F. Chen, in Plasma Diagnostic Techniques, edited by R. H. Huddlestone and S. L. Leonard (Academic, New York, 1965), p. 113.
    • (1965) Plasma Diagnostic Techniques , pp. 113
    • Chen, F.F.1
  • 19
    • 0003328521 scopus 로고
    • 71st ed. edited by D. R. Lide, Chemical Rubber, Boca Raton, FL
    • CRC Handbook of Chemistry and Physics, 71st ed. edited by D. R. Lide (Chemical Rubber, Boca Raton, FL, 1990), pp. 10–4, 10–30.
    • (1990) CRC Handbook of Chemistry and Physics


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.