A GaAs MMIC chip-set for mobile communications using on-chip ferroelectric capacitors

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 1993, Pages 172-173

  Nagata, S ^a,b   Ueda, T ^a,a,b,b   Noma, A ^a,b   Koizumi, H ^a,b   Kanazawa, K ^a,b   Ishida, H ^a,b   Tanaka, T ^a,b   Ueda, D ^a,b   Kazumura, M ^a,b   Kano, G ^a,b   De Araujo, C P ^a,b  

^a PANASONIC CORPORATION   (Japan)

^b Symetrix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM STRONTIUM TITANATE; FERROELECTRICITY; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; SEMICONDUCTING GALLIUM; STRONTIUM TITANATES;

BYPASS CAPACITORS; FERROELECTRIC CAPACITORS; FREQUENCY CHARACTERISTIC; FREQUENCY RANGES; MIXING CHARACTERISTICS; MOBILE COMMUNICATIONS; SWITCHING CAPABILITY; THIRD ORDER INTERMODULATION;

LOW NOISE AMPLIFIERS;

EID: 84956270871     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.1993.280010     Document Type: Conference Paper

References (2)

1. Azuma, M., et al., "Electrical Characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics", 1992 4th Intl. Symp. on Integrated Ferroelectrics.
2. Ueda,T., et al., "High+ FerroelectricThin Filmcapacitorfor GaAs Microwave IC", 1992 4th Intl. Symp. on Integrated Ferroelectrics.