Tunneling current in InGaAs and optimum design for InGaAs/InP avalanche photodiode

Japanese Journal of Applied Physics

Volumn 19, Issue 6, 1980, Pages L277-L280

  Ando, Hiroaki ^a   Kanbe, Hiroshi ^a   Ito, Masanori ^b   Kaneda, Takao ^b  

^a Musashino Electrical Communication Lab   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84956260153     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.19.L277     Document Type: Article

References (19)

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