Efficiency improvement of solar cell utilizing plasma-deposited silicon nitride

Japanese Journal of Applied Physics

Volumn 21, Issue S2, 1982, Pages 47-51

  Morita, Hiroshi ^a   Onoe, Akira ^a   Sato, Akira ^a   Washida, Hiroshi ^a   Kato, Taketoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84956101363     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAPS.21S2.47     Document Type: Article

References (8)

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2. M. G. Coleman, R. A. Pryor and T. G. Sparks: Proc. 14th IEEE Photovoltaic Specialists Conf. (1980) p. 793.
3. A. Usami, S. Gintate and B. Kudo: Oyo Buturi 49 (1980) 1192 [in Japanese].
4. T. Kato, H. Morita, H. Washida and A. Onoe: Technical Program of the 23rd Electronic Materials Conf., Santa Barbara, California, 1981, p. 45.
5. H. J. Hovel: Semiconductors and Semimetals 11 Solar Cells (Academic Press, 1975).
6. J. D. Arora, S. N. Singh and P. C. Mathur: Solid State Electron. 24 (1981) 739.
7. A. Neugroschel, F. A. Lindholm and S. C. Pao: Appl. Phys. Lett. 33 (1978) 168.
8. J. L. del Valle, C. Flores and F. Duenas: Proc. 14th IEEE Photovoltaic Specialists Conf. (1980) p. 202.