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Volumn 8, Issue 4, 2016, Pages 2284-2292

High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors

(12) Ulaganathan, Rajesh Kumar a,b,c Lu, Yi Ying a,b Kuo, Chia Jung a,b Tamalampudi, Srinivasa Reddy b,c,d Sankar, Raman a Boopathi, Karunakara Moorthy c,e Anand, Ankur b,c,e Yadav, Kanchan a,b,c Mathew, Roshan Jesus b,c,e Liu, Chia Rung a,b Chou, Fang Cheng a Chen, Yit Tsong a,b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

c ACADEMIA SINICA (Taiwan)

d NATIONAL CENTRAL UNIVERSITY (Taiwan)

e NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTODETECTORS; PHOTONS;

EXTERNAL QUANTUM EFFICIENCY; GERMANIUM SULFIDE; LONG TERM STABILITY; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; PHOTOCURRENT GENERATIONS; PHOTORESPONSIVITY; SPECIFIC DETECTIVITY;

FIELD EFFECT TRANSISTORS;

EID: 84955493059 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr05988g Document Type: Article

Times cited : (152)

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