Behavior of defects induced by metallic impurities on si(100) surfaces

Japanese Journal of Applied Physics

Volumn 28, Issue 12 R, 1989, Pages 2413-2420

  Hourai, Masataka ^a   Murakami, Katsumi ^a   Shigematsu, Tatsuhiko ^a   Fujino, Nobukatsu ^a   Shiraiwa, Toshio ^a,b  

^a Kyushu Electronic Metal Co Ltd ^*  (Japan)

^b Osaka Titanium Co Ltd ^*  (Japan)

Author keywords

Cu; Extrinsic gettering; Fe; Intrinsic gettering; Metal precipitation; Metallic contamination; Metallic impurity; Ni; Oxi dation induced stacking fault; Shallow pit; Si

Indexed keywords

EID: 84955110983     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.2413     Document Type: Article

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