Photolithography yield enhancement due to reduced consumption of the usable depth of focus resulting from advanced wafer back surface clean processing

10th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 1999

Volumn , Issue , 1999, Pages 388-393

  Lysaght, P S ^a   Ybarra, I ^a   Doros, T ^a   Beach, J ^a   Mello, J ^b   Gupta, G ^b   West, M ^b   Debear, D ^b  

^a SEMATECH   (United States)

^b SEZ America Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT POLARIZATION; LITHOGRAPHY; MANUFACTURE; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

CRITICAL DIMENSION CONTROL; LITHOGRAPHIC PROCESS; LITHOGRAPHIC RESOLUTION; OPTICAL EXTENSION; PRE-CLEAN PROCESS; PROCESS DEVELOPMENT; SEMICONDUCTOR MANUFACTURING INDUSTRY; STEP-AND-SCAN LITHOGRAPHY;

SILICON WAFERS;

EID: 84954199780     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.1999.798271     Document Type: Conference Paper

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