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Volumn 1991-January, Issue , 1991, Pages 657-660
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A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers
a a a a a a a
a
NEC CORPORATION
(Japan)
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Author keywords
Annealing; Bonding; CMOS technology; Laser beams; MOSFETs; Optical device fabrication; Ring lasers; Stacking; Three dimensional integrated circuits; Transistors
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Indexed keywords
ANNEALING;
BONDING;
CHEMICAL BONDS;
CHEMICAL POLISHING;
CMOS INTEGRATED CIRCUITS;
ELECTRON DEVICES;
LASER BEAMS;
RING LASERS;
THIN FILMS;
THREE DIMENSIONAL INTEGRATED CIRCUITS;
TRANSISTORS;
ACTIVE DEVICE LAYERS;
ANNEALING TECHNIQUES;
CMOS TECHNOLOGY;
MOSFETS;
OPTICAL DEVICE FABRICATION;
RING OSCILLATOR;
STACKING;
THREE DIMENSIONAL IC;
MOSFET DEVICES;
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EID: 84954188403
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1991.235336 Document Type: Conference Paper |
Times cited : (17)
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References (0)
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