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Nanoscale

Volumn 8, Issue 3, 2016, Pages 1352-1359

Interface Schottky barrier engineering via strain in metal-semiconductor composites

(4) Ma, Xiangchao a Dai, Ying a Yu, Lin a Huang, Baibiao a

a SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; BINS; CALCULATIONS; ELECTRON GAS; ELECTRONS; HETEROJUNCTIONS; METALS; NATURAL GAS FIELDS; SCHOTTKY BARRIER DIODES;

CRYSTAL FIELD THEORY; FIRST-PRINCIPLES CALCULATION; INTERFACIAL POTENTIAL; METAL SEMICONDUCTORS; METAL-SEMICONDUCTOR HETEROSTRUCTURES; SCHOTTKY BARRIER HEIGHTS; TIGHT BINDING METHODS; TIGHT BINDING THEORY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84954152510 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr05583k Document Type: Article

Times cited : (47)

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