High performance sub-half micron CMOS using rapid thermal processing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 101-104

  Chapman, R A ^a   Kuehne, J W ^a   Ying, P S H ^a   Richardson, W F ^a   Paterson, A R ^a   Lane, A P ^a   Chen, I C ^a   Velo, L ^a   Blanton, C H ^a   Mosiehl, M M ^a   Paterson, J L ^a  

^a Semiconduct Proc Des Ctr T   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; GATES (TRANSISTOR); HEAT TREATMENT; RAPID THERMAL PROCESSING; RECONFIGURABLE HARDWARE; THRESHOLD VOLTAGE;

CHANNEL IMPLANTS; CMOS TECHNOLOGY; EFFECTIVE CHANNEL LENGTH; GATE DELAYS; GATE LENGTH; GATE OXIDE; HIGH PRESSURE NITROGEN; WELL DESIGN;

INTEGRATED CIRCUIT DESIGN;

EID: 84954151367     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235414     Document Type: Conference Paper

References (0)