1040×1040 element PtSi Schottky-barrier IR image sensor

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 175-178

  Yutani, Naoki ^a   Yagi, Hirofumi ^a   Kimata, Masafumi ^a   Nakanishi, Junji ^a   Nagayoshi, Shinsuke ^a   Tubouchi, Natsuro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Detectors; Electron optics; Infrared image sensors; Optical imaging; Optical noise; Optical saturation; Platinum; Schottky diodes; Silicides; Temperature

Indexed keywords

DETECTORS; ELECTRON DEVICES; ELECTRON OPTICS; ELECTRONS; IMAGE SENSORS; PLATINUM; SCHOTTKY BARRIER DIODES; SILICIDES; TEMPERATURE;

HIGH-DENSITY INFRARED; MINIMUM FEATURE SIZES; NOISE EQUIVALENT TEMPERATURE DIFFERENCE; OPTICAL IMAGING; OPTICAL NOISE; OPTICAL SATURATION; PLATINUM SILICIDES; SCHOTTKY DIODES;

INFRARED IMAGING;

EID: 84954147905     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235473     Document Type: Conference Paper

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