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Volumn 1991-January, Issue , 1991, Pages 549-552
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Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE COUPLED DEVICES;
ELECTRON DEVICES;
ELECTRONS;
HOT CARRIERS;
HOT ELECTRONS;
PHOTOIONIZATION;
PHOTONS;
RECONFIGURABLE HARDWARE;
ELECTRON POPULATION;
EXPERIMENTAL VERIFICATION;
INTERELECTRODE GAPS;
MINORITY CARRIER;
ORDERS OF MAGNITUDE;
PHOTON EMISSIONS;
PHYSICAL MECHANISM;
SOLE MECHANISMS;
MOSFET DEVICES;
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EID: 84954146509
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1991.235410 Document Type: Conference Paper |
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Times cited : (26)
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References (0)
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