Selective CVD tungsten as an alternative to blanket tungsten for submicron plug applications on VLSI circuits

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 273-276

  Bradbury, Donald R ^a   Turner, John E ^a   Nauka, Kris ^a   Chiu, Kuang Y ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

Contact resistance; Dielectric losses; Plasma applications; Plasma materials processing; Plugs; Resists; Surface contamination; Surface resistance; Tungsten; Very large scale integration

Indexed keywords

CONTACT RESISTANCE; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; ELECTRON DEVICES; NUCLEATION; PHOTORESISTS; PLASMA APPLICATIONS; TUNGSTEN; VLSI CIRCUITS;

LOW-RESISTANCE CONTACTS; PLASMA MATERIALS-PROCESSING; PLUGS; RESISTS; SACRIFICIAL LAYER; SELECTIVE PROCESS; SURFACE CONTAMINATIONS; TUNGSTEN DEPOSITION;

SURFACE RESISTANCE;

EID: 84954144925     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235450     Document Type: Conference Paper

References (0)