Large-electromigration-resistance copper interconnect technology for sub-half-micron ULSI's

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 285-288

  Ohmi, T ^a   Hoshi, T ^a   Yoshie, T ^a   Takewaki, T ^a   Otsuki, M ^a   Shibata, T ^a   Nitta, T ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Annealing; Conductivity; Copper; Electromigration; Integrated circuit interconnections; Life estimation; Life testing; Substrates; Temperature; Ultra large scale integration

Indexed keywords

ANNEALING; COPPER; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; ELECTRON DEVICES; FILM GROWTH; INTEGRATED CIRCUIT TESTING; INTEGRATION TESTING; KINETIC ENERGY; KINETICS; METALLIC FILMS; SILICON ALLOYS; SUBSTRATES; TEMPERATURE; ULSI CIRCUITS;

COPPER INTERCONNECTS; ELECTROMIGRATION RESISTANCE; ELECTROMIGRATION TESTING; INTEGRATED CIRCUIT INTERCONNECTIONS; INTERCONNECT MATERIALS; INTERCONNECTION TECHNOLOGY; LIFE ESTIMATION; LIFE-TESTING;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84954105890     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235447     Document Type: Conference Paper

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