An accurate model of thin film SOI-MOSFET breakdown voltage

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 671-674

  Chen, Jim ^a   Assaderaghi, Faribon ^a   Wann, Hsing Jen ^a   Ko, Ping ^a   Hu, Chenming ^a   Cheng, Peng ^b   Solomon, Ray ^b   Chan, Tung Yi ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

^c CYPRESS SEMICONDUCTOR   (United States)

Author keywords

Analytical models; Breakdown voltage; Current measurement; Electric breakdown; Electrons; Impact ionization; MOSFET circuits; Semiconductor films; Silicon on insulator technology; Transistors

Indexed keywords

AMPLIFICATION; ANALYTICAL MODELS; BIPOLAR TRANSISTORS; DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRIC INSULATORS; ELECTRON DEVICES; ELECTRONS; FILM THICKNESS; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; IONIZATION; MOSFET DEVICES; RECONFIGURABLE HARDWARE; SEMICONDUCTING SILICON; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

ACCURATE MODELING; ANALYTIC MODELING; CHANNEL LENGTH; ELECTRON IMPACT-IONIZATION; GATE INDUCED DRAIN LEAKAGES; MOSFET CIRCUITS; QUANTITATIVE MODELING; SEMICONDUCTOR FILMS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 84954094633     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235333     Document Type: Conference Paper

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