The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 71-74

  Verhaverbeke, S ^a   Meuris, M ^a   Mertens, P W ^b   Heyns, M M ^c   Philipossian, A ^c   Graf, D ^a   Schnegg, A ^a  

^a IMEC   (Belgium)

^b HEWLETT PACKARD COMPANY   (United States)

^c WACKER CHEMIE AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CALCIUM; CONTAMINATION; COPPER; ELECTRIC BREAKDOWN; ELECTRON DEVICES; IMPURITIES; METALS; SILICON; SILICON WAFERS; SURFACE ROUGHNESS; WATER DISTRIBUTION SYSTEMS; WATER SUPPLY SYSTEMS; ZINC;

BREAKDOWN PROPERTY; METALLIC CONTAMINATION; METALLIC IMPURITY; OXIDATION BEHAVIORS; OXIDE BREAKDOWN; OXIDE INTEGRITY; STANDARD GRADES; THERMAL OXIDE LAYER;

METALLIC COMPOUNDS;

EID: 84954092004     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235421     Document Type: Conference Paper

References (0)