Boron doped g-C 3 N 4 with enhanced photocatalytic UO 2 2+ reduction performance

Applied Surface Science

Volumn 360, Issue , 2016, Pages 1016-1022

  Lu, Changhai ^a   Chen, Rongyue ^a   Wu, Xi ^a   Fan, Meifeng ^a   Liu, Yunhai ^a   Le, Zhanggao ^a   Jiang, Shujuan ^a   Song, Shaoqing ^a,b  

^a EAST CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Boron doping; Graphitic carbon nitride; Photocatalysis; UO 2 2+ reduction

Indexed keywords

ENERGY GAP; LIGHT; PHOTOCATALYSIS; PHOTOCATALYSTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

ABSORPTION INTENSITY; ATTRACTIVE STRATEGIES; BORON-DOPING; CARBON NANO-MATERIALS; GRAPHITIC CARBON NITRIDES; PHOTOCATALYTIC ACTIVITIES; PHOTOCATALYTIC PERFORMANCE; PHOTOCATALYTIC REDUCTION;

URANIUM DIOXIDE;

EID: 84952863934     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.11.112     Document Type: Article

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