Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas

Pure and Applied Chemistry

Volumn 62, Issue 9, 1990, Pages 1709-1720

  Flamm, Daniel L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84952618677     PISSN: 00334545     EISSN: 13653075     Source Type: Journal    
DOI: 10.1351/pac199062091709     Document Type: Article

References (32)

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31. In ref. 29 the authors present a theoretical derivation for the power low dependence, which predicts y = 1/2.
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