A new correction method for dry etch loading effect in photomask fabrication

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Volumn , Issue , 2000, Pages 42-43

  Ki, Won Tai ^a   Yang, Seung Hune ^a   Moon, Seong Yong ^a   Choi, Seong Woon ^a   Han, Woo Sung ^a   Sohn, Jung Min ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; MASKS; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; PHOTOMASKS; WET ETCHING;

CRITICAL DIMENSION VARIATIONS; DRY ETCHING PROCESS; E-BEAM PROXIMITY EFFECT; HIGH-DENSITY DEVICES; MACRO-LOADING EFFECTS; MICRO LOADING EFFECTS; OPTICAL PROXIMITY CORRECTIONS; PHOTOMASK FABRICATION;

LOADING;

EID: 84952066758     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.2000.872613     Document Type: Conference Paper

References (0)