Ionizcd-PVD by pulsed sputtering of Ta for metallization of high-aspect-ratio structures in VLSI

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 191-195

  Helmersson, Ulf ^a   Khan, Z S ^a,b   Alami, Jones ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b KARLSTAD UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; IONIZATION; MAGNETRONS; METALLIZING; MICROSYSTEMS; SEMICONDUCTOR DEVICES; SPUTTERING;

DEGREE OF IONIZATION; HIGH ASPECT RATIO STRUCTURES; MAGNETRON SOURCES; METAL DEPOSITION; PEAK POWER DENSITIES; PULSED POWER SUPPLY; PULSED SPUTTERING; REPETITION FREQUENCY;

ASPECT RATIO;

EID: 84951954622     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889478     Document Type: Conference Paper

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