Advanced silicon diode temperature sensors with minimized self heating and noise for cryogenic applications

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 351-354

  Shwarts, Yu M ^a   Sokolov, V N ^a   Shwarts, M M ^b   Fedorov, I A ^a   Venger, E F ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; DIODES; MICROSYSTEMS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE MEASUREMENT; TEMPERATURE SENSORS; UNCERTAINTY ANALYSIS;

CRYOGENIC APPLICATIONS; EXPERIMENTAL INVESTIGATIONS; LIMITING VALUES; MIDDLE TEMPERATURES; SENSOR CHARACTERISTICS; SILICON DIODES; TEMPERATURE MEASUREMENT UNCERTAINTY; TEMPERATURE RESPONSE CURVE;

SEMICONDUCTOR DEVICES;

EID: 84951937864     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889518     Document Type: Conference Paper

References (5)

1. Temperature measurement and control, Lake Shore Cryotronics, Inc., part 1 of 2, USA 1995; ibid 1999.
2. S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
3. W. Shockley, Bell System Techn. J. 28,435, 1949.
4. S. C. Shoo, Solid-State Electron. 11, 1069, 1968.
5. J. A. del Alamo and R. M. Swanson, IEEE Electron Devices Lett. 7(11), 629, 1986.