Low damage processing of III-V devices by ECR plasma techniques

GaAs IC Symposium Technical Digest 1992

Volumn , Issue , 1992, Pages 173-175

  Murrell, A J ^a   Grimwood, R C ^a   O'Sullivan, P ^b   Gilbert, M ^b   Vanner, K ^c   Ruddell, F ^c   Davies, I ^c   Hilton, K ^d   Bland, S ^e   Spear, D ^e  

^a OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

^b MARTLESHAM HEATH   (United Kingdom)

^c GEC Marconi Materials Technology Ltd   (United Kingdom)

^d DRA   (United Kingdom)

^e STL ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; THALLIUM ALLOYS;

ACTIVE DEVICES; ECR PLASMA; ELECTRICAL DAMAGE; LOW DAMAGES; PROCESSING EQUIPMENT; RF PLASMA; WET-PROCESSING;

INTEGRATED CIRCUITS;

EID: 84951898824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247197     Document Type: Conference Paper

References (3)

1. GF Doughty, R Cheung, MA Foad, M Rahman, NI Cameron, NP Johnson, PD Wang and CDW Wilkinson, "Nano-structure fabrication: dry etching damage," Proc. MRS. (1991) B4.7.
2. PH Singer, "Evaluating plasma etch damage," Semi. Int. May 1992, p. 78.
3. 2-based discharges," Plasma Chem. and Plasma Processing. Vol 11 (1991) p. 405.