Tailoring magnetism of black phosphorene doped with B, C, N, O, F, S and Se atom: A DFT calculation

Journal of Alloys and Compounds

Volumn 662, Issue , 2016, Pages 528-533

  Yang, Lifang ^a   Mi, Wenbo ^a   Wang, Xiaocha ^b  

^a TIANJIN UNIVERSITY   (China)

^b TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electronic properties; Magnetism; Phosphorene; Spin polarization

Indexed keywords

ATOMS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MAGNETIC MOMENTS; MAGNETISM; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPIN POLARIZATION;

DFT CALCULATION; DOPING SITES; HALF-METALLIC; N-TYPE DOPANTS; NON-MAGNETIC ATOMS; P-TYPE DOPANT; PHOSPHORENE; SPIN SPLITTINGS;

DOPING (ADDITIVES);

EID: 84951836508     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.12.095     Document Type: Article

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