GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass

Applied Physics Letters

Volumn 107, Issue 12, 2015, Pages

  Hu, Yonghong ^a,b   Zhang, Shengli ^a   Sun, Shaofa ^b   Xie, Meiqiu ^a   Cai, Bo ^a   Zeng, Haibo ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; FLEXIBLE ELECTRONICS; MONOLAYERS; STRAIN;

BULK COUNTERPART; CARRIER EFFECTIVE MASS; ENERGY ENGINEERING; FIRST-PRINCIPLES CALCULATION; GENERALIZED GRADIENT APPROXIMATIONS; INDIRECT BAND GAP; NANOSCALE ELECTRONICS; TWO-DIMENSIONAL MATERIALS;

ENERGY GAP;

EID: 84951803175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4931459     Document Type: Article

References (54)

1. S. D. Sarma, S. Adam, E. H. Hwang, and E. Rossi, Rev. Mod. Phys. 83, 407 (2011). 10.1103/RevModPhys.83.407
2. D. Jose and A. Datta, Acc. Chem. Res. 47, 593 (2014). 10.1021/ar400180e
3. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
4. S. L. Zhang, Y. H. Hu, Z. Y. Hu, B. Cai, and H. B. Zeng, Appl. Phys. Lett. 107, 022102 (2015). 10.1063/1.4926761
5. B. Cai, S. L. Zhang, Z. Y. Hu, Y. S. Zou, and H. B. Zeng, Phys. Chem. Chem. Phys. 17, 12634 (2015). 10.1039/C5CP00563A
6. M. P. Levendorf, C. J. Kim, L. Brown, P. Y. Huang, R. W. Havener, D. A. Muller, and J. Park, Nature 488, 627 (2012). 10.1038/nature11408
7. M. Houssa, E. Scalise, K. Sankaran, G. Pourtois, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 98, 223107 (2011). 10.1063/1.3595682
8. E. Bianco, S. Butler, S. Jiang, O. D. Restrepo, W. Windl, and J. E. Goldberger, ACS Nano 7, 4414 (2013). 10.1021/nn4009406
9. S. L. Zhang, Z. Yan, Y. Li, Z. F. Chen, and H. B. Zeng, Angew. Chem., Int. Ed. 54, 3112 (2015). 10.1002/anie.201411246
10. F. N. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, Nat. Photonics 8, 899 (2014). 10.1038/nphoton.2014.271
11. L. C. Gomes and A. Carvalho, Phys. Rev. B 92, 085406 (2015). 10.1103/PhysRevB.92.085406
12. H. L. Zhuang and R. G. Hennig, JOM 66, 366 (2014). 10.1007/s11837-014-0885-3
13. G. A. Tritsaris, B. D. Malone, and E. Kaxiras, J. Appl. Phys. 113, 233507 (2013). 10.1063/1.4811455
14. L. Li, Z. Chen, Y. Hu, X. Wang, T. Zhang, W. Chen, and Q. Wang, J. Am. Chem. Soc. 135, 1213 (2013). 10.1021/ja3108017
15. X. H. Ma, K. H. Cho, and Y. M. Sung, CrystEngComm 16, 5080 (2014). 10.1039/c4ce00213j
16. A. K. Singh and R. G. Hennig, Appl. Phys. Lett. 105, 042103 (2014). 10.1063/1.4891230
17. S. M. Yoon, H. J. Song, and H. C. Choi, Adv. Mater. 22, 2164 (2010). 10.1002/adma.200903719
18. D. D. Vaughn II, R. J. Patel, M. A. Hickner, and R. E. Schaak, J. Am. Chem. Soc. 132, 15170 (2010). 10.1021/ja107520b
19. D. Mao, Y. D. Wang, C. J. Ma, L. Han, B. Q. Jiang, X. T. Gan, S. J. Hua, W. D. Zhang, T. Mei, and J. L. Zhao, Sci. Rep. 5, 7965 (2015). 10.1038/srep07965
20. D. J. Xue, J. Tan, J. S. Hu, W. Hu, Y. G. Guo, and L. Wan, J. Adv. Mater. 24, 4528 (2012). 10.1002/adma.201201855
21. D. D. Vaughn, D. Sun, S. M. Levin, A. J. Biacchi, T. S. Mayer, and R. E. Schaak, Chem. Mater. 24, 3643 (2012). 10.1021/cm3023192
22. A. M. Chockla, J. T. Harris, and B. A. Korgel, Chem. Mater. 23, 1964 (2011). 10.1021/cm2001607
23. H. Wiedemeier and H. G. von Schnering, Z. Kristallogr. 156, 143 (1981). 10.1524/zkri.1981.156.1-2.143
24. L. D. Zhao, S. H. Lo, Y. S. Zhang, H. Sun, G. J. Tan, C. Uher, C. Wolverton, V. P. Dravid, and M. G. Kanatzidis, Nature 508, 373-377 (2014). 10.1038/nature13184
25. Y. Lee, S. H. Lo, C. Q. Chen, H. Sun, D. Y. Chung, T. C. Chasapis, C. Uher, V. P. Dravid, and M. G. Kanatzidis, Nat. Commun. 5, 3640 (2014). 10.1038/ncomms4640
26. B. Mukherjee, Y. Q. Cai, H. R. Tan, Y. P. Feng, E. S. Tok, and C. H. Sow, ACS Appl. Mater. Interfaces 5, 9594 (2013). 10.1021/am402550s
27. C. R. Kannewurf and R. J. Cashman, J. Phys. Chem. Solids 22, 293 (1961). 10.1016/0022-3697(61)90274-8
28. S. N. Dutta and G. A. Jeffrey, Inorg. Chem. 4, 1363 (1965). 10.1021/ic50031a032
29. D. S. Kyriakos and A. N. Anagnostopoulos, J. Appl. Phys. 58, 3917 (1985). 10.1063/1.335613
30. F. M. Gashimzade, D. G. Guliev, D. A. Guseinova, and V. Y. Shteinshrayber, J. Phys.: Condens. Matter 4, 1081 (1992). 10.1088/0953-8984/4/4/018
31. L. M. Yu, A. Degiovanni, P. A. Thiry, J. Ghijsen, R. Caudano, and P. Lambin, Phys. Rev. B 47, 16222 (1993). 10.1103/PhysRevB.47.16222
32. H. C. Hsueh, H. Vass, S. J. Clark, G. J. Ackland, and J. Crain, Phys. Rev. B 51, 16750 (1995). 10.1103/PhysRevB.51.16750
33. L. Makinistian and E. A. Albanesi, Phys. Rev. B 74, 045206 (2006). 10.1103/PhysRevB.74.045206
34. L. Makinistian and E. A. Albanesi, J. Phys.: Condens. Matter 19, 186211 (2007). 10.1088/0953-8984/19/18/186211
35. A. Rathor, V. Sharma, N. L. Heda, Y. Sharma, and B. L. Ahuja, Rad. Phys. Chem. 77, 391 (2008). 10.1016/j.radphyschem.2007.12.011
36. D. Bräuhaus, C. Schindler, U. Böttger, and R. Waser, Thin Solid Films 516, 1223 (2008). 10.1016/j.tsf.2007.05.074
37. L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen, and Y. Zhang, Nat. Nanotechnol. 9, 372 (2014). 10.1038/nnano.2014.35
38. H. Liu, A. T. Neal, Z. Zhu, D. Tomanek, and P. D. Ye, ACS Nano 8, 4033 (2014). 10.1021/nn501226z
39. E. S. Reich, Nature 506, 19 (2014). 10.1038/506019a
40. See supplementary material at http://dx.doi.org/10.1063/1.4931459 E-APPLAB-107-066538 for the energy band structures and VBMs of the GeSe monolayer and bulk GeSe; the electronic band structures of the GeSe monolayer under typical strains along y direction and along both x and y directions; and the variations of energy band gap of GeSe monolayer under tension and compression.
41. A. K. Singh, H. L. Zhuang, and R. G. Hennig, Phys. Rev. B 89, 245431 (2014). 10.1103/PhysRevB.89.245431
42. H. L. Zhuang and R. G. Hennig, J. Phys. Chem. C 117, 20440 (2013). 10.1021/jp405808a
43. M. Buscema, D. J. Groenendijk, G. A. Steele, H. S. van der Zant, and A. Castellanos-Gomez, Nat. Commun. 5, 4651 (2014). 10.1038/ncomms5651
44. J. Qiao, X. Kong, Z. X. Hu, F. Yang, and W. Ji, Nat. Commun. 5, 5475 (2014).
45. F. Xia, H. Wang, and Y. Jia, Nat. Commun. 5, 4458 (2014).
46. P. Z. Antunez, J. J. Buchley, and R. L. Brutchey, Nanoscale 3, 2399 (2011). 10.1039/c1nr10084j
47. S. Zhao, H. Wang, Y. Zhou, L. Liao, Y. Jiang, X. Yang, G. Chen, M. Lin, Y. Wang, H. Peng, and Z. Liu, Nano Res. 8, 288 (2015). 10.1007/s12274-014-0676-8
48. J. S. Qiao, X. H. Kong, Z. X. Hu, F. Yang, and W. Ji, Nat. Commun. 5, 4475 (2014).
49. Y. D. Ma, Y. Dai, M. Guo, C. W. Niu, L. Yu, and B. B. Huang, Nanoscale 3, 2301 (2011). 10.1039/c1nr10167f
50. H. Shi, H. Pan, Y. W. Zhang, and B. I. Yakobson, Phys. Rev. B 87, 155304 (2013). 10.1103/PhysRevB.87.155304
51. X. H. Peng, Q. Wei, and A. Copple, Phys. Rev. B 90, 085402 (2014). 10.1103/PhysRevB.90.085402
52. Y. Xu, X. F. Liu, and W. L. Guo, Nanoscale 6, 12929 (2014). 10.1039/C4NR01486C
53. Z. Zhu, J. Guan, and D. Tománek, Phys. Rev. B 91, 161404 (2015). 10.1103/PhysRevB.91.161404
54. R. Roldán, A. C. Gomez, E. Cappelluti, and F. Guinea, e-print arXiv:1504.07926v1 [cond-mat.mes-hall].