SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 2, 2015, Pages 640-648

A solution-processed n-doped fullerene cathode interfacial layer for efficient and stable large-area perovskite solar cells

(5) Chang, Chih Yu a Huang, Wen Kuan a Chang, Yu Chia a Lee, Kuan Ting a Chen, Chin Ti b

a FENG CHIA UNIVERSITY (Taiwan)

b INSTITUTE OF CHEMISTRY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BUTYRIC ACID; CATHODES; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRODES; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; NEGATIVE IONS; PEROVSKITE; SEMICONDUCTOR DOPING; SILVER;

CATHODE INTERFACIAL LAYERS; CETYLTRIMETHYLAMMONIUM BROMIDE; ELECTRICAL CONDUCTIVITY; ELECTRON TRANSPORT LAYERS; HIGH POWER CONVERSION; INTERFACIAL CHARGE TRANSFER; LARGE-AREA SOLAR CELLS; PERFORMANCE PROPERTIES;

SOLAR CELLS;

EID: 84951768723 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c5ta09080f Document Type: Article

Times cited : (126)

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