Dislocation Etch for (100) Planes in Silicon

Journal of the Electrochemical Society

Volumn 119, Issue 7, 1972, Pages 948-951

  d'Aragona, F Secco ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

crystal imperfections; dislocations; etchants; silicon crystals

Indexed keywords

EID: 84951050944     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2404374     Document Type: Article

References (6)

1. W.C. Dash, J. Appl. Phys., 27, 1193 (1956).
2. E. Sirtl and A. Adler, Z. Metallic., 52, 529 (1961).
3. C.E. Hallas and E. Mendel, J. Appl. Phys., 42, 477 (1971).
4. J.W. Faust, “The Surface Chemistry of Metals and Semiconductors,” H.C. Gatos, Editor, p. 151, John Wiley & Sons, Inc., New York (1960).
5. A.J.R. de Kock, Appl. Phys. Letters, 16, 100 (1970).
6. F. Secco d'Aragona, Phys. Status Solodi (a), 7, 577 (1971).