Semi-insulating polycrystalline-silicon (SIPOS) passivation technology

Japanese Journal of Applied Physics

Volumn 15, Issue , 1976, Pages 35-40

  Matsushita, Takeshi ^a   Aoki, Teruaki ^a   Otsu, Takaji ^a   Yamoto, Hisayoshi ^a   Hayashi, Hisao ^a   Okayama, Masanori ^a   Kawana, Yoshiyuki ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84951044115     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAPS.15S1.35     Document Type: Article

References (6)

1. T. Aoki, T. Matsushita, H. Yamoto, H. Hayashi, M. Okayama and Y. Kawana: ECS Extended Abstracts 75-1 (1975) 352.
2. T. Matsushita and H. Hayashi: Proc. Inter. Conf. Solid State Devices, Tokyo, 1973
3. Oyo Buturi (J. Japan Soc. Appl. Phys.) 43 (1974) Suppl., p. 395.
4. M. Mochizuki, T. Aoki, H. Yamoto, M. Okayama, M. Abe and T. Ando: Proc. 7th Conf. Solid State Devices, Tokyo, 1975; Japan. J. appl. Phys. 15 (1975) Suppl., p. 41.
5. D. S. Zoroglu and L. E. Clark: IEEE Trans. Electron Devices ED-19 (1972) No. 1, 4.
6. Y. Kajiwara, S. Nagai and H. Hagino: ECS Extended Abstracts 74-1 (1974) 64.