Electrical and optical properties of MeV As and P ion implanted and annealed indium phosphide

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 137-140

  Carmody, C ^a   Boudinov, H ^a,b   Tan, H H ^a   Jagadish, C ^a   Lederer, M J ^a   Kolev, V ^a   Luther Davies, B ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Capacitive sensors; Conductivity; Hall effect; Indium phosphide; Particle beam optics; Rapid thermal annealing; Reflectivity; Temperature; Ultrafast optics; X ray diffraction

Indexed keywords

ANNEALING; CAPACITIVE SENSORS; ELECTRIC CONDUCTIVITY; HALL EFFECT; HALL MOBILITY; INDIUM; INDIUM PHOSPHIDE; INSULATING MATERIALS; OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; REFLECTION; TEMPERATURE; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; DIFFERENTIAL REFLECTIVITY; ELECTRICAL AND OPTICAL PROPERTIES; HALL EFFECT MEASUREMENT; OPTOELECTRONIC PROPERTIES; PARTICLE BEAM OPTICS; ULTRAFAST OPTICS; X-RAY DIFFRACTION MEASUREMENTS;

ION IMPLANTATION;

EID: 84950139499     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIM.2000.939214     Document Type: Conference Paper

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