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IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 232-235

The effect of electric field on the self-organized quantum dots

(3) Babinski A a Korona, K P a Baranowski, J M a

Author keywords

Atomic force microscopy; Capacitance; Gallium arsenide; Laser excitation; Laser mode locking; Photoluminescence; Quantum dots; Temperature; Tunneling; US Department of Transportation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTRIC FIELDS; ELECTRON TUNNELING; GALLIUM ARSENIDE; INSULATING MATERIALS; LASER EXCITATION; LASER MODE LOCKING; LOCKS (FASTENERS); NANOCRYSTALS; PHOTOLUMINESCENCE; QUANTUM DOT LASERS; TEMPERATURE; THERMAL EVAPORATION;

FIELD-EFFECT STRUCTURE; INGAAS/GAAS; LINESHAPE CHANGES; PL MEASUREMENTS; SELF-ORGANIZED QUANTUM DOTS; TIME-RESOLVED; US DEPARTMENT OF TRANSPORTATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84950104293 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/SIM.2000.939233 Document Type: Conference Paper

Times cited : (2)

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