1.62 eV/1.1 eV InGaP/InGaAs dual-junction solar cell development on lattice-mismatched GaAs

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1285-1288

  Sinharoy, Samar ^a   Smith, Mark A ^a   Weizer, Victor G ^a   Pal, AnnaMaria ^a   Khan, Osman ^a   Scheiman, David A ^b   Jenkins, Phillip P ^b  

^a Essential Research Inc   (United States)

^b OHIO AEROSPACE INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; OPTIMIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS;

AIR MASS ZEROS; BOTTOM CELLS; DUAL JUNCTION SOLAR CELL; DUAL-JUNCTION CELLS; GAAS SUBSTRATES; HIGH-EFFICIENCY; INGAP/INGAAS; LATTICE-MISMATCHED;

EFFICIENCY;

EID: 84949561776     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916125     Document Type: Conference Paper

References (4)

1. th IEEE Photovoltaic specialists Conf., 692 (1982).
2. th European Photovoltaic Solar Energy Conf., Glasgow, U.K. May 2000.
3. R. W. Hoffman, Jr., N. S. Fatemi, M. A. Stan, P. Jenkins, V. G. Weizer, D. A. Scheiman, and D. J. Brinker, MRS Symp. Proc. 551, 51 (1999).
4. th Space Photovoltaic Research and Technology conf., Cleveland (1999).