Investigation of carrier lifetime in P-type CZ-silicon: Specific limitations and realistic prediction of cell performance

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 57-60

  Rein, S ^a   Warta, W ^a   Glunz, S W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); EFFICIENCY; SCREEN PRINTING; SILICON; SOLAR CELLS;

CZOCHRALSKI SILICON; EMPIRICAL EXPRESSION; HIGH-EFFICIENCY CELLS; LIFETIME DEGRADATION; REALISTIC SIMULATION; SOLAR CELL STRUCTURES; STABLE EFFICIENCIES; THEORETICAL LIMITS;

CARRIER LIFETIME;

EID: 84949552622     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915752     Document Type: Conference Paper

References (10)

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