Thin film poly-si solar cells prepared by pecvd using very high excitation frequency

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 825-828

  Matsui, T ^a   Tsukiji, M ^a   Saika, H ^a   Toyama, T ^a   Okamoto, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; DEPOSITION RATES; PLASMA DIAGNOSTICS; POLYCRYSTALLINE MATERIALS; SILICON; SOLAR CELLS; THIN FILMS; VOLUME FRACTION;

CRYSTALLINE VOLUME FRACTION; DEPOSITION CONDITIONS; HIGH EXCITATION FREQUENCY; N-I-P SOLAR CELLS; PHOTOVOLTAIC PERFORMANCE; PREFERENTIAL ORIENTATION; SI SOLAR CELLS; VHF-PECVD;

SILICON SOLAR CELLS;

EID: 84949551599     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916010     Document Type: Conference Paper

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