Novel processing of solar cells with porous silicon texturing

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 299-302

  Ludemann R ^a,b   Damiani, B M ^a   Rohatgi, A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; OPEN CIRCUIT VOLTAGE; PASSIVATION; PHOSPHORUS; POROUS SILICON; REFLECTION; REFLECTIVE COATINGS; SILICON; SILICON SOLAR CELLS; SILICON WAFERS;

DOPING TYPE AND LEVELS; EMITTER SATURATION CURRENT DENSITY; INDUSTRIAL PRODUCTION; PHOSPHORUS DIFFUSION; SILICON TEXTURING; SIMULTANEOUS FORMATION; SURFACE PASSIVATION; THERMAL OXIDATION;

SOLAR CELLS;

EID: 84949544678     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915819     Document Type: Conference Paper

References (2)

1. R. R. Bilyalov, L. Stalmans, L. Schirone, et al, "Use of porous silicon antireflection coating in multicrystalline silicon solar cell processing", IEEE Trans. Electron Devices 46, 1999, pp. 2035-2040.
2. M. Schnell, R. Lüdemann and S. Schaefer, "Stain Etched Porous Silicon - A Simple Method for the Simultaneous Formation of Selective Emitter and ARC, Proc. 16th EU PVSEC, 2000, pp. in print.